Electroabsorption modulator‐integrated distributed Bragg reflector laser diode for C‐band WDM‐based networks

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and wide wavelength tuning. The DBR-LD contains two tuning elements, plasma heater tunings, both which are implemented in the DBR section, have blue-shift red-shift through current injection, respectively. light created from is intensity-modulated EAM voltage, integrated monolithically with using butt–joint coupling method. fabricated chip shows threshold approximately 8 mA, range greater than 30 nm, static extinction ratio higher 20 dB while maintaining side mode suppression 40 under window 1550 nm. To evaluate its modulation properties, was bonded onto mount including radiofrequency line load resistor showing clear eye openings at rates 25 Gb/s nonreturn-to-zero 50 pulse amplitude 4-level,